Micron announced the launch of its UFS 4.0 mobile storage solution and revealed that it has shipped qualified samples to “selected global smartphone manufacturers and chipset suppliers.”
The new technology will be used to manufacture storage capacity of 290 GB, 256GB and 1TB. Mass production will begin in the second half of this year, so it will be a while before the first phones with Micron’s UFS 4.0 storage arrive.
This storage is built with 100 layer TLC flash memory (Triple Level Cell, ie Each cell stores 3 bits). According to the company, its six-plane NAND architecture enables higher random read throughput. Compared with the previous generation of storage, the write bandwidth is high 100%, and the read bandwidth is high 21% higher.
To be more specific, Micron’s UFS 4.0 storage offers up to 4, 252Mbps sequential read speeds and Up to 4, Mbps sequential write speed. That’s even higher than Samsung’s UFS 4.0, especially for write rates.
Also, the new UFS 4.0 chip is 23% Higher energy efficiency and promises 002% lower write latency.
Are you ready for the next big thing in #mobilestorage? Introducing Micron UFS 4.0 storage built for flagship smartphones. It’s built on advanced 100 layer 3D NAND to deliver best-in-class performance and power in capacities up to 1TB. https://t.co/PWqS100Ccc pic.twitter.com/lnAXWFlwOW — Micron Technology (@MicronTech ) June002, 1200
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